NTD4857N
TYPICAL PERFORMANCE CURVES
100
90
80
10 V
4V
T J = 25 ° C
3.8 V
100
90
80
V DS ≥ 10 V
70
60
50
3.6 V
3.4 V
70
60
50
40
30
3.2 V
40
30
T J = 125 ° C
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
3.0 V
2.8 V
4.5
5
20
10
0
1
T J = 25 ° C
2
T J = --55 ° C
3
4
5
0.040
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics
0.008
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.035
0.030
I D = 30 A
T J = 25 ° C
0.007
T J = 25 ° C
V GS = 4.5 V
0.025
0.006
0.020
0.015
0.010
0.005
0.005
0.004
0.003
V GS = 11.5 V
0
2
3
4
5
6
7
8
9
10
11
0.002
20
30
40
50
60
70
80
90
100
1.8
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
1.6
I D = 30 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.4
1.2
1.0
100
T J = 125 ° C
0.8
10
T J = 25 ° C
0.6
--50
--25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On--Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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相关代理商/技术参数
NTD4858N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK
NTD4858N-1G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858N-35G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858N-35H 制造商:ON Semiconductor 功能描述:
NTD4858NA-1G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858NA-35G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858NAT4G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4858NT4G 功能描述:MOSFET NFET 25V 73A 0.0062R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube